Qunatitative Measurement of Vacancy

The use of transmission electron microscopy (TEM) to provide a quantitative measurement of both vacancy and interstitial dusters in ionimplanted silicon was reviewed in this study. Interstitials agglomerate into rod-like defects on {311} planes, and the evaporation of these defects can be directly correlated to the diffusion enhancements observed during annealing of ion-damaged silicon.
Vacancy clusters are easily detected in TEM once they have been labelled using a Au-diffusion technique. The combination of the two approaches provides a quantitative test for models of implantation and annealing in silicon. Detailed models for point defect behaviour, which include Ostwaldripening and the surface recombination velocity, reproduce all of the crucial features of the observed defect annealing.

Quantitative TEM of point defects in Si, ,Journal of Electron Microscopy
49(2): 293-298 (2000)